IRGS8B60KPBF

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Specifications

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Specifications

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Product Category ::	IGBT Transistors	Mounting Style ::	SMD/SMT
Continuous Collector Current At 25 C ::	28 A	Pd - Power Dissipation ::	167 W
Collector- Emitter Voltage VCEO Max ::	600 V	Package / Case ::	D-PAK-3
Maximum Operating Temperature ::	+ 150 C	Maximum Gate Emitter Voltage ::	+/- 20 V
Packaging ::	Tube	Configuration ::	Single
Collector-Emitter Saturation Voltage ::	2.2 V	Manufacturer ::	Infineon Technologies

Product Category ::	IGBT Transistors
Mounting Style ::	SMD/SMT
Continuous Collector Current At 25 C ::	28 A
Pd - Power Dissipation ::	167 W
Collector- Emitter Voltage VCEO Max ::	600 V
Package / Case ::	D-PAK-3
Maximum Operating Temperature ::	+ 150 C
Maximum Gate Emitter Voltage ::	+/- 20 V
Packaging ::	Tube
Configuration ::	Single
Collector-Emitter Saturation Voltage ::	2.2 V
Manufacturer ::	Infineon Technologies

Description

IRGS8B60KPBF

The IRGS8B60KPBF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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