IRG4PH40UPBF

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Description: IGBT Transistors 1200V UltraFast 5-40kHz

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Specifications

Description

Specifications

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Product Category ::	IGBT Transistors	Mounting Style ::	Through Hole
Continuous Collector Current At 25 C ::	30 A	Pd - Power Dissipation ::	160 W
Collector- Emitter Voltage VCEO Max ::	1.2 KV	Package / Case ::	TO-247-3
Maximum Gate Emitter Voltage ::	+/- 20 V	Packaging ::	Tube
Configuration ::	Single	Collector-Emitter Saturation Voltage ::	3.5 V
Manufacturer ::	Infineon Technologies

Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole
Continuous Collector Current At 25 C ::	30 A
Pd - Power Dissipation ::	160 W
Collector- Emitter Voltage VCEO Max ::	1.2 KV
Package / Case ::	TO-247-3
Maximum Gate Emitter Voltage ::	+/- 20 V
Packaging ::	Tube
Configuration ::	Single
Collector-Emitter Saturation Voltage ::	3.5 V
Manufacturer ::	Infineon Technologies

Description

IRG4PH40UPBF

The IRG4PH40UPBF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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