NGD8201ANT4G

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Description: IGBT Transistors NGD8201ANT4G GEN4 IGBT

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Specifications

Description

Specifications

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Gate-Emitter Leakage Current ::	300 UA	Product Category ::	IGBT Transistors
Mounting Style ::	SMD/SMT	Continuous Collector Current At 25 C ::	20 A
Pd - Power Dissipation ::	125 W	Collector- Emitter Voltage VCEO Max ::	440 V
Package / Case ::	DPAK	Maximum Operating Temperature ::	+ 175 C
Maximum Gate Emitter Voltage ::	15 V	Packaging ::	Reel
Configuration ::	Single	Collector-Emitter Saturation Voltage ::	1.5 V
Manufacturer ::	Littelfuse

Gate-Emitter Leakage Current ::	300 UA
Product Category ::	IGBT Transistors
Mounting Style ::	SMD/SMT
Continuous Collector Current At 25 C ::	20 A
Pd - Power Dissipation ::	125 W
Collector- Emitter Voltage VCEO Max ::	440 V
Package / Case ::	DPAK
Maximum Operating Temperature ::	+ 175 C
Maximum Gate Emitter Voltage ::	15 V
Packaging ::	Reel
Configuration ::	Single
Collector-Emitter Saturation Voltage ::	1.5 V
Manufacturer ::	Littelfuse

Description

NGD8201ANT4G

The NGD8201ANT4G,from Littelfuse,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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