STGWT40HP65FB

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Description: IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

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Specifications

Description

Specifications

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Gate-Emitter Leakage Current ::	+/- 250 NA	Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole	Continuous Collector Current At 25 C ::	80 A
Pd - Power Dissipation ::	283 W	Collector- Emitter Voltage VCEO Max ::	650 V
Package / Case ::	TO-3P-3	Maximum Operating Temperature ::	+ 175 C
Maximum Gate Emitter Voltage ::	+/- 30 V	Configuration ::	Single
Collector-Emitter Saturation Voltage ::	1.6 V	Manufacturer ::	STMicroelectronics

Gate-Emitter Leakage Current ::	+/- 250 NA
Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole
Continuous Collector Current At 25 C ::	80 A
Pd - Power Dissipation ::	283 W
Collector- Emitter Voltage VCEO Max ::	650 V
Package / Case ::	TO-3P-3
Maximum Operating Temperature ::	+ 175 C
Maximum Gate Emitter Voltage ::	+/- 30 V
Configuration ::	Single
Collector-Emitter Saturation Voltage ::	1.6 V
Manufacturer ::	STMicroelectronics

Description

STGWT40HP65FB

The STGWT40HP65FB,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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