IRGP4640DPBF

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Description: IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC

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Specifications

Description

Specifications

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Gate-Emitter Leakage Current ::	100 NA	Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole	Continuous Collector Current At 25 C ::	40 A
Pd - Power Dissipation ::	125 W	Collector- Emitter Voltage VCEO Max ::	600 V
Package / Case ::	TO-247-3	Maximum Operating Temperature ::	+ 175 C
Packaging ::	Tube	Maximum Gate Emitter Voltage ::	20 V
Collector-Emitter Saturation Voltage ::	1.9 V	Manufacturer ::	Infineon Technologies

Gate-Emitter Leakage Current ::	100 NA
Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole
Continuous Collector Current At 25 C ::	40 A
Pd - Power Dissipation ::	125 W
Collector- Emitter Voltage VCEO Max ::	600 V
Package / Case ::	TO-247-3
Maximum Operating Temperature ::	+ 175 C
Packaging ::	Tube
Maximum Gate Emitter Voltage ::	20 V
Collector-Emitter Saturation Voltage ::	1.9 V
Manufacturer ::	Infineon Technologies

Description

IRGP4640DPBF

The IRGP4640DPBF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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