IXBF55N300

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Description: IGBT Transistors High Voltage High Gain BIMOSFET

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Specifications

Description

Specifications

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Gate-Emitter Leakage Current ::	+/- 200 NA	Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole	Continuous Collector Current At 25 C ::	86 A
Pd - Power Dissipation ::	357 W	Collector- Emitter Voltage VCEO Max ::	3 KV
Package / Case ::	ISOPLUS I4-Pak-3	Maximum Operating Temperature ::	+ 150 C
Maximum Gate Emitter Voltage ::	+/- 25 V	Configuration ::	Single
Collector-Emitter Saturation Voltage ::	2.7 V	Manufacturer ::	IXYS

Gate-Emitter Leakage Current ::	+/- 200 NA
Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole
Continuous Collector Current At 25 C ::	86 A
Pd - Power Dissipation ::	357 W
Collector- Emitter Voltage VCEO Max ::	3 KV
Package / Case ::	ISOPLUS I4-Pak-3
Maximum Operating Temperature ::	+ 150 C
Maximum Gate Emitter Voltage ::	+/- 25 V
Configuration ::	Single
Collector-Emitter Saturation Voltage ::	2.7 V
Manufacturer ::	IXYS

Description

IXBF55N300

The IXBF55N300,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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