NGTG15N60S1EG

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Description: IGBT Transistors 15A 600V IGBT

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Specifications

Description

Specifications

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Gate-Emitter Leakage Current ::	100 NA	Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole	Continuous Collector Current At 25 C ::	30 A
Pd - Power Dissipation ::	47 W	Collector- Emitter Voltage VCEO Max ::	600 V
Package / Case ::	TO-220	Packaging ::	Tube
Maximum Gate Emitter Voltage ::	20 V	Collector-Emitter Saturation Voltage ::	1.95 V
Manufacturer ::	Onsemi

Gate-Emitter Leakage Current ::	100 NA
Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole
Continuous Collector Current At 25 C ::	30 A
Pd - Power Dissipation ::	47 W
Collector- Emitter Voltage VCEO Max ::	600 V
Package / Case ::	TO-220
Packaging ::	Tube
Maximum Gate Emitter Voltage ::	20 V
Collector-Emitter Saturation Voltage ::	1.95 V
Manufacturer ::	Onsemi

Description

NGTG15N60S1EG

The NGTG15N60S1EG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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