IRG7PH50K10DPBF

Product Details

Payment & Shipping Terms

Description: IGBT Transistors 1200V UltraFast Discrete IGBT

Get Best Price

Contact Now

Specifications

Description

Specifications

Highlight:

Gate-Emitter Leakage Current ::	100 NA	Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole	Continuous Collector Current At 25 C ::	90 A
Pd - Power Dissipation ::	400 W	Collector- Emitter Voltage VCEO Max ::	1200 V
Package / Case ::	TO-247AC-3	Maximum Operating Temperature ::	+ 150 C
Maximum Gate Emitter Voltage ::	+/- 30 V	Packaging ::	Tube
Configuration ::	Single	Collector-Emitter Saturation Voltage ::	2.4 V
Manufacturer ::	IR / Infineon

Gate-Emitter Leakage Current ::	100 NA
Product Category ::	IGBT Transistors
Mounting Style ::	Through Hole
Continuous Collector Current At 25 C ::	90 A
Pd - Power Dissipation ::	400 W
Collector- Emitter Voltage VCEO Max ::	1200 V
Package / Case ::	TO-247AC-3
Maximum Operating Temperature ::	+ 150 C
Maximum Gate Emitter Voltage ::	+/- 30 V
Packaging ::	Tube
Configuration ::	Single
Collector-Emitter Saturation Voltage ::	2.4 V
Manufacturer ::	IR / Infineon

Description

IRG7PH50K10DPBF

The IRG7PH50K10DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

Tags: