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MG1275S-BA1MM

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Description: IGBT MODULE 1200V 105A 630W S3

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Specifications
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Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
105 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
S-3 Module
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 75A (Typ)
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
S3
Mfr:
Littelfuse Inc.
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
500 µA
IGBT Type:
-
Power - Max:
630 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
5.52 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
No
Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
105 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
S-3 Module
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 75A (Typ)
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
S3
Mfr:
Littelfuse Inc.
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
500 µA
IGBT Type:
-
Power - Max:
630 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
5.52 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
No
Description
MG1275S-BA1MM
IGBT Module Half Bridge 1200 V 105 A 630 W Chassis Mount S3

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