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MG75P12E2 Yangjie Electronic Technology IGBT

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Description: Transistors - IGBTs - Modules E2

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Specifications
Highlight:

MG75P12E2

,

Yangjie Electronic Technology

,

IGBT

Category:
Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules
Current - Collector (Ic) (Max):
75 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.25V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
-
Mfr:
Yangjie Technology
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
442 W
Input:
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce:
2.6 NF @ 25 V
Configuration:
Three Phase Inverter With Brake
NTC Thermistor:
Yes
Category:
Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules
Current - Collector (Ic) (Max):
75 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.25V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
-
Mfr:
Yangjie Technology
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
442 W
Input:
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce:
2.6 NF @ 25 V
Configuration:
Three Phase Inverter With Brake
NTC Thermistor:
Yes
Description
MG75P12E2 Yangjie Electronic Technology IGBT

IGBT Module Three Phase Inverter with Brake 1200 V 75 A 442 W Chassis Mount

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